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Part Number : SIA975DJ-T1-GE3
Manufacturer : Vishay / Siliconix
Description : SIA975DJ-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : SIA975DJ-T1-GE3 More Information
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Pricing(USD) : $0.64
Remark : Manufacturer: Vishay / Siliconix. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Fall Time : 15 ns
Rds On Max : 41 mΩ
Schedule B : 8541290080
Contact Plating : Tin
Power Dissipation : 1.9 W
Number of Channels : 2
Turn-On Delay Time : 22 ns
Element Configuration : Dual
Max Operating Temperature : 150 °C
Drain to Source Resistance : 41 mΩ
Continuous Drain Current (ID) : 4.5 A
Drain to Source Breakdown Voltage : -12 V
Products Category : Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty : 5341 In Stock
Applications : Medical Grid infrastructure Wireless infrastructure
Weight : 28.009329 mg
Rise Time : 22 ns
Resistance : 41 mΩ
Number of Pins : 6
Input Capacitance : 1.5 nF
Threshold Voltage : -400 mV
Number of Elements : 2
Turn-Off Delay Time : 32 ns
Max Power Dissipation : 7.8 W
Min Operating Temperature : -55 °C
Gate to Source Voltage (Vgs) : 8 V
Drain to Source Voltage (Vdss) : 12 V
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